AP3303H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
25
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
20
-
-
-
14.5
3
8.5
8.8
65
11
7
340
250
98
Max. Units
-
-
25
4
-
1
100
±100
24
-
-
-
-
-
-
540
-
-
V
V/℃
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=20A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=25V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=
±
20V
I
D
=20A
V
DS
= 20V
V
GS
=10V
V
DS
=15V
I
D
=20A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=20A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30.5
29
Max. Units
1.5
-
-
V
ns
nC
t
rr
Qrr
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
