AP3302H/J
25
11
T
c
=25 C
20
o
10V
10
T
c
=150
o
C
9
10V
9.0V
8.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
9.0V
15
8
7
6
7.0V
5
4
8.0V
10
5
7.0V
V
G
=5.0V
3
2
V
G
=5.0V
1
0
0
1
2
3
4
5
6
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
1.6
I
D
=20A
V
G
=10V
Normalized R
DS(ON)
20
1.4
P
D
(W)
1.2
10
1.0
0.8
0
0.6
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
100
4.5
10
4
I
S
(A)
V
GS(th)
(V)
T
j
=150 C
1
o
T
j
=25
o
C
3.5
3
0.1
2.5
2
0.01
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
