AP3302H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=25V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=
±
20V
I
D
=10A
V
DS
= 24V
V
GS
=10V
V
DS
=15V
I
D
=16A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.94Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
25
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
7.4
2.2
4.2
8
7.4
11
3
164
158
62
Max. Units
-
50
4
1
25
±100
13
-
-
-
-
-
-
290
-
-
V
mΩ
V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=16A, V
GS
=0V
I
S
=16A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29
21
Max. Units
1.3
-
-
V
ns
nC
t
rr
Qrr
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
