AP30T10GH-HF
f=1.0MHz
10
1200
I
D
= 12 A
1000
V
GS
, Gate to Source Voltage (V)
8
6
C (pF)
V
DS
= 50 V
V
DS
= 60 V
V
DS
= 80 V
800
C
iss
600
4
400
2
200
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
4
8
12
16
20
24
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
10
0.2
I
D
(A)
1ms
10ms
1
0.1
0.1
0.05
P
DM
t
0.02
T
c
=25 C
Single Pulse
0.1
0.1
1
10
100
1000
o
100ms
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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