AP30T10GH-HF
50
40
T
C
= 25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
T
C
= 150
o
C
30
10V
7.0V
6.0V
5.0V
30
V
G
= 4.0V
20
V
G
= 4.0V
20
10
10
0
0
2
4
6
8
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.4
I
D
=8A
T
C
=25 C
2.0
o
I
D
=12A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
60
1.6
1.2
50
0.8
40
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I
D
=1mA
16
Normalized V
GS(th)
(V)
1.2
I
S
(A)
12
0.8
T
j
=150 C
8
o
T
j
=25 C
o
0.4
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3