AP30N30W
f=1.0MHz
16
10000
I
D
= 15 A
V
GS
, Gate to Source Voltage (V)
12
C
iss
1000
V
DS
= 120 V
V
DS
= 160 V
V
DS
= 200 V
C (pF)
C
oss
8
100
4
10
C
rss
0
0
20
40
60
80
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
10
0.1
0.1
0.05
1
T
c
=25 C
Single Pulse
0.1
o
1ms
10ms
100ms
1s
DC
0.02
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=5V
30
V
G
T
j
=25
o
C
T
j
=150 C
o
Q
G
4.5V
I
D
, Drain Current (A)
20
Q
GS
Q
GD
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
