AP30N30W
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25 C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
250
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
0.24
-
-
23
-
-
-
63
19
14
28
36
84
45
550
6
1.9
Typ.
-
235
2.24
Max. Units
-
-
68
3.5
-
10
100
±1
100
-
-
-
-
-
-
-
-
3
V
V/℃
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
V
GS
=10V, I
D
=15A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=15A
V
DS
=250V, V
GS
=0V
V
DS
=200V ,V
GS
=0V
V
GS
= ±30V
I
D
=15A
V
DS
=200V
V
GS
=10V
V
DS
=125V
I
D
=15A
R
G
=10Ω,V
GS
=10V
R
D
=8.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=36A, V
GS
=0V
I
S
=15A, V
GS
=0V
dI/dt=100A/µs
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
4290 6900
Source-Drain Diode
Max. Units
1.5
-
-
V
ns
µC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=30A.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
