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AP30G120BSW-HF 参数 Datasheet PDF下载

AP30G120BSW-HF图片预览
型号: AP30G120BSW-HF
PDF下载: 下载PDF文件 查看货源
内容描述: 与FRD N沟道绝缘栅双极晶体管 [N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 104 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP30G120BSW-HF
160
120
T
C
=25 C
I
C
, Collector Current (A)
120
o
20V
18V
15V
I
C
, Collector Current (A)
100
T
C
=150 C
o
20V
18V
15V
80
12V
60
80
12V
40
V
GE
=10V
40
V
GE
=10V
20
0
0
4
8
12
16
20
0
0
4
8
12
16
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V
GE
=15V
100
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
5
I
C ,
Collector Current(A)
80
T
C
=25
60
I
C
= 60 A
4
T
C
=150
I
C
=30A
3
40
2
20
0
0
2
4
6
8
10
1
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Typical Saturation Voltage
Characteristics
2
2400
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
I
C
=1mA
2000
1.6
Normalized V
GE(th)
(V)
Capacitance (pF)
1600
1.2
C
ies
1200
0.8
800
0.4
400
0
-50
0
50
100
150
0
1
5
9
13
17
21
25
29
C
oes
C
res
33
37
Junction Temperature (
o
C )
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2