AP30G120BSW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=2.9V@I
C
=30A
▼
CO-PAK, IGBT With FRD
▼
RoHS Compliant & Halogen-Free
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
TO-3P
G
E
Parameter
Rating
1200
+30
60
30
1
1200V
30A
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=25℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Collector-Emitter Voltage
Units
V
V
A
A
A
A
A
W
℃
℃
℃
120
8
40
208
-55 to 150
-55 to 150
300
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
0.6
5
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=8A
I
F
=8A
di/dt = 100 A/µs
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=250uA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.7
3.7
-
63
12
32
40
45
125
430
1.3
3.1
1400
120
15
2.5
70
170
Max. Units
+500 nA
1
3.4
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
3.2
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
ns
nC
1
201107251
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
