AP2608GY
2.4
1.6
T
A
=25 C
2
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
=150 C
1.2
o
10V
7.0V
5.0V
4.5V
1.6
1.2
0.8
V
G
=3.0V
0.8
V
G
=3.0V
0.4
0.4
0
0
4
8
12
16
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
=0.5A
V
G
=10V
2.0
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
-50
0
50
100
150
1.6
1
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
3
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
2.5
2
Normalized V
GS(th)
(V)
1.4
1.2
I
S
(A)
1.5
T
j
=150 C
o
T
j
=25 C
o
1
0.8
0.5
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Normalized Gate Threshold
Voltage v.s. Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
