AP2608GY
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Fast Switching Characteristic
▼
Lower Gate Charge
▼
Small Footprint & Low Profile Package
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
BV
DSS
R
DS(ON)
G
D
150V
2.6Ω
0.57A
I
D
SOT-26
D
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
150
+20
0.57
0.45
2
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201005033
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
