AP25G45EM
180
140
160
T
A
=25
o
C
140
5.0V
4.5V
4.0V
I
C
, Collector Current (A)
120
T
A
=150
o
C
5.0V
4.5V
4.0V
I
D
, Drain Current (A)
100
120
100
3.0V
80
3.0V
80
60
60
2.0V
40
40
2.0V
20
20
VG=1.0V
0
0
2
4
6
8
10
0
2
4
6
8
VG=1.0V
10
12
0
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
10
V
CE
=4.5V
I
C ,
Collector Current(A)
120
V
GE
=4.5V
V
CE(sat),
Saturation Voltage(V)
8
I
C
=130A
25
℃
70
℃
125
℃
T
A
=150
℃
6
80
I
C
=100A
4
40
I
C
=50A
2
0
0
1
2
3
4
5
6
0
0
20
40
60
80
100
120
140
160
V
GE
, Cate-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
1.5
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
200
I
CP
, Peak Collector Current (A)
-50
0
50
100
150
1.2
160
V
GE(th)
(V)
0.9
120
0.6
80
0.3
40
0
0
0
1
2
3
4
5
6
7
Junction Temperature (
o
C)
V
GE
, Gate-to-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Minimum Gate Drive Area
v.s. Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
