AP25G45EM
Advanced Power
Electronics Corp.
▼
High Input Impedance
▼
High Pick Current Capability
▼
4.5V Gate Drive
Strobe
Flash Applications
▼
S
C
C
C
C
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
CE
I
CP
450V
150A
C
G
E
G
E
SO-8
E
E
Absolute Maximum Ratings
Symbol
V
CE
V
GE
V
GEP
I
CP
P
D
@T
C
=25℃
1
T
STG
T
J
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
450
±6
±8
150
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rth
JA1
Parameter
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25℃)
Test Conditions
V
GE
=± 6V, V
CE
=0V
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=150A (Pulsed)
Min.
-
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6
-
64.5
7
30
11.5
24.5
150
3.3
2227
200
79
-
Max.
10
10
8
1.2
-
-
-
-
-
-
-
-
-
-
50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
µs
pF
pF
pF
℃/W
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=V
GE
, I
C
=250uA
I
C
=50A
V
CE
=360V
V
GE
=5V
V
CC
=225V
I
C
=50A
R
G
=25Ω
V
GE
=5V
V
GE
=0V
V
CE
=25V
f=1.0MHz
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in
2
copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
200507032
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
