AP2451GY-HF
N-Channel
f=1.0MHz
10
1000
V
GS
, Gate to Source Voltage (V)
8
I
D
=5A
V
DS
= 16 V
C
iss
6
C (pF)
100
C
oss
C
rss
4
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
100us
1ms
I
D
(A)
1
0.1
0.1
0.05
0.02
0.01
10ms
0.1
P
DM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=155
o
C/W
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
100ms
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
V
G
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
Q
G
4.5V
Q
GS
Q
GD
20
10
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
