AP2451GY-HF
N-Channel
20
20
T
A
=25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0 V
4.5 V
3.5 V
2.5 V
T
A
= 150
o
C
16
5.0 V
4.5 V
3.5 V
2.5 V
12
12
8
8
4
4
V
G
= 1.5 V
V
G
= 1.5 V
0
0
1
2
3
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
40
I
D
=3A
Normalized R
DS(ON)
T
A
=25
o
C
1.4
I
D
=5A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
35
1.0
30
25
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
4
Normalized V
GS(th)
1.1
3
I
S
(A)
T
j
=150
o
C
2
T
j
=25
o
C
0.7
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
