AP2422GY
20
20
T
A
=25
o
C
16
I
D
, Drain Current (A)
12
I
D
, Drain Current (A)
5.0 V
4.5 V
3.5 V
2.5 V
T
A
= 150 C
16
o
5.0 V
4.5 V
3.5 V
12
2.5 V
8
8
4
4
V
G
= 1.5 V
0
0
1
2
3
4
V
G
= 1.5 V
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I
D
=2A
T
A
=25
℃
Normalized R
DS(ON)
60
I
D
=4A
V
G
= 4.5 V
1.4
R
DS(ON)
(m
Ω
)
40
1.0
20
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
4
3
Normalized V
GS(th)
(V)
T
j
=150
o
C
I
S
(A)
2
T
j
=25
o
C
1.2
0.6
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
