AP2422GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V gate drive
▼
Lower on-resistance
▼
Surface mount package
▼
RoHS compliant
2928-8
D2
D2
D1
D1
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G2
S2
G1
S1
30V
40mΩ
4.8A
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
G1
D1
D2
G2
S1
S2
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±12
4.8
3.8
20
1.39
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200816053-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
