AP2314GN-HF
f=1.0MHz
12
1000
I
D
=3A
V
GS
, Gate to Source Voltage (V)
10
8
6
C (pF)
V
DS
=10V
V
DS
=12V
V
DS
=16V
C
iss
100
4
C
oss
C
rss
2
0
0
2
4
6
8
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
I
D
(A)
1ms
1
0.05
P
DM
0.01
10ms
100ms
T
A
=25 C
Single Pulse
0.01
0.1
1
10
100
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 360℃/W
0.1
o
1s
DC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
=5V
I
D
, Drain Current (A)
V
G
T
j
=150
o
C
10
T
j
=25
o
C
Q
G
4.5V
Q
GS
Q
GD
5
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
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