AP2314GN-HF
15
15
T
A
=25 C
I
D
, Drain Current (A)
o
5.0V
4.5V
3.0V
I
D
, Drain Current (A)
10
T
A
= 150 C
o
5.0V
4.5V
10
3.0 V
2.5V
2.5V
5
5
V
G
= 1. 5V
0
0
1
2
3
0
0
1
2
V
G
= 1 .5V
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.6
I
D
=1.2A
T
A
=25
o
C
1.4
I
D
= 3.5 A
V
G
=4.5V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
80
1.2
1.0
60
0.8
40
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
Normalized V
GS(th)
(V)
1.2
1.2
2
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
