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AP20P02H 参数 Datasheet PDF下载

AP20P02H图片预览
型号: AP20P02H
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 84 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP20P02H/J
20
40
16
30
-I
D
, Drain Current (A)
12
P
D
(W)
8
4
0
25
50
75
100
o
20
10
0
125
150
0
30
60
90
o
120
150
T
c
, Case Temperature ( C)
T
c
, Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
100us
Normalized Thermal Response (R
thjc
)
0.2
-I
D
(A)
0.1
0.1
0.05
10
1ms
0.02
P
DM
t
0.01
T
Single Pulse
10ms
T
C
=25 °C
Single Pulse
1
0.1
1
10
100
100ms
DC
0.01
0.00001
0.0001
0.001
0.01
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
1
-V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance