AP20N03GS/P
10
1000
f=1.0MHz
I
D
=10A
V
GS
, Gate to Source Voltage (V)
8
C (pF)
6
V
DS
=16V
V
DS
=20V
V
DS
=24V
C
iss
C
oss
100
4
C
rss
2
0
10
0
2
4
6
8
10
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
0.2
I
D
(A)
10
1ms
0.1
0.1
0.05
P
DM
t
0.02
10ms
T
c
=25
o
C
Single Pulse
1
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
100ms
DC
10
100
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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