AP20N03GS/P
70
50
T
C
=25
o
C
60
T
C
=150
o
C
I
D
, Drain Current (A)
10V
8.0V
40
10V
8.0V
I
D
, Drain Current (A)
50
30
40
6.0V
6.0V
20
30
4.0V
10
20
4.0V
10
V
G
=3.0V
0
0
2
4
6
8
V
G
=3.0V
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.8
I
D
=10A
75
T
C
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=10A
V
G
=10V
1.4
R
DSON
(m
Ω
)
65
1.2
55
1.0
45
0.8
35
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
4. Normalized On-Resistance
v.s. Junction Temperature
3
100
10
2
I
S
(A)
1
T
j
= 150 C
o
T
j
= 25 C
o
V
GS(th)
(V)
1
0
1.3
-50
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
