AP1A003GMT-HF
250
200
T
C
=25 C
200
o
I
D
, Drain Current (A)
150
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
C
= 150
o
C
160
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
120
100
80
50
40
0
0
4
8
12
16
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.8
I
D
= 25 A
T
C
=25
o
C
1.4
1.6
I
D
=25A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.4
1.2
1.2
1.0
1
0.8
0.8
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
40
I
D
=250uA
1.6
30
Normalized V
GS(th)
I
S
(A)
T
j
=150 C
20
o
T
j
=25 C
o
1.2
0.8
10
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
