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AP1A003GMT-HF 参数 Datasheet PDF下载

AP1A003GMT-HF图片预览
型号: AP1A003GMT-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 55 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP1A003GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
30V
0.99mΩ
260A
S
Description
AP1A003 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK
®
5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
PMPAK
®
5x6
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V
GS
@ 10V
4
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
30
+20
260
57
46
300
104
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
Drain Current, V
GS
@ 10V
3
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
1.2
25
Unit
℃/W
℃/W
1
201311181
Data and specifications subject to change without notice