AP15T25H-HF
12
2400
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=4A
V
DS
=200V
2000
8
1600
6
C (pF)
1200
C
iss
4
800
2
400
0
0
10
20
30
40
0
0
40
80
120
160
200
240
C
oss
C
rss
280
320
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
100us
I
D
(A)
0.1
0.1
0.05
1ms
1
P
DM
0.02
t
T
T
C
=25
o
C
Single Pulse
0
1
10
100
10ms
100ms
1s
DC
1000
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
16
12
V
DS
=5V
T
j
=25 C
I
D
, Drain Current (A)
12
o
10
I
D
, Drain Current (A)
10
8
8
6
T
j
=150
o
C
4
4
2
0
0
2
4
6
8
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C)
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Case
Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
