AP15T25H-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=4A
VGS=0V, ID=250uA
250
-
-
-
V
RDS(ON)
VGS(th)
gfs
-
2
-
320 mΩ
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=200V, VGS=0V
VGS= +20V, VDS=0V
ID=4A
-
4
V
7
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
IGSS
+100
Qg
31
5.5
13
9
49.6
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=200V
-
-
-
-
-
-
VGS=10V
VDD=125V
ID=4A
10
23
9
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
1250 2000
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
85
55
-
-
f=1.0MHz
f=1.0MHz
1.5
3
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=4A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.3
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
IS=4A, VGS=0V,
75
-
-
Qrr
dI/dt=100A/µs
210
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
