AP1333GU
2.5
2.5
2.0
T
A
=25 C
o
-I
D
, Drain Current (A)
- 5.0V
- 4.5V
- 3.5V
-I
D
, Drain Current (A)
T
A
= 150
o
C
2.0
-5.0V
-4.5V
-3.5V
1.5
- 2.5V
1.5
-2.5V
1.0
1.0
V
G
= - 2.0V
0.5
0.5
V
G
= - 2.0V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1400
1.6
1200
I
D
= - 0. 3 A
Normalized R
DS(ON)
T
A
=25
o
C
1.4
I
D
= - 0. 5 A
V
G
= - 4.5V
1000
R
DS(ON)
(m
Ω
)
1.2
800
1.0
600
0.8
400
200
0.6
1
4
7
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
1.5
0.6
-I
S
(A)
T
j
=150
o
C
0.4
T
j
=25
o
C
Normalized -V
GS(th)
(V)
1.2
1.0
0.5
0.2
0.0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
