AP1333GU
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Gate Drive
▼
Small Package Outline
▼
Fast Switching Speed
▼
RoHS Compliant
SOT-323 G
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
-20V
800mΩ
-550mA
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±12
-550
-440
2.5
0.35
0.003
-55 to
150
-55 to
150
Unit
V
V
mA
mA
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
360
Unit
℃/W
Data and specifications subject to change without notice
200822051-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
