AP10N70P/R-A
f=1.0MHz
16
10000
V
GS
, Gate to Source Voltage (V)
I
D
=10A
12
C
iss
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
C
oss
100
8
4
C
rss
0
1
0
20
40
60
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
100us
0.2
I
D
(A)
0.1
1ms
1
0.1
0.05
P
DM
0.02
T
c
=25 C
Single Pulse
o
10ms
100ms
1S
DC
t
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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