AP10N70R/P-A
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1.0mA
V
GS
=10V, I
D
=5.0A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=10A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=10A
R
G
=10Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
650
-
2
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
35.9
8.3
11.5
14.9
19.7
51.7
23.3
630
20
2
Max. Units
-
0.6
4
-
10
100
±100
57
-
-
-
-
-
-
-
-
3
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
1950 3120
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
2
Test Conditions
T
j
=25℃, I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
640
7460
Max. Units
1.5
-
-
V
ns
nC
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by safe operating area.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1.0mH , R
G
=25Ω , I
AS
=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
