AP1001BSQ
10
1200
f=1.0MHz
I
D
=12A
1000
V
GS
, Gate to Source Voltage (V)
8
6
C (pF)
V
DS
=13V
V
DS
=16V
V
DS
=20V
800
C
iss
600
4
400
C
oss
C
rss
2
200
0
0
4
8
12
16
20
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thja
)
Duty factor = 0.5
100
Operation in this
area limited by
R
DS(ON)
10
100us
1ms
0.2
I
D
(A)
0.1
0.1
1
0.1
T
A
=25
o
C
Single Pulse
10ms
100ms
1s
DC
0.05
P
DM
t
T
0.02
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
Rthja = 58℃/W
0.01
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
