AP1001BSQ
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lead-Free Package
▼
Low Conductance Loss
▼
Low Profile ( < 0.7mm )
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
6mΩ
15A
Description
The AP1001BSQ used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFET
TM
package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
GreenFET
TM
D
G
S
D
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
D
@T
C
=25℃
I
DM
P
D
@T
A
=25℃
P
D
@T
A
=70℃
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
3
3
SQ
Rating
30
+20
15
12
59
120
2.2
1.4
34
28.8
24
-40 to 150
-40 to 150
Units
V
V
A
A
A
A
W
W
W
mJ
A
℃
℃
Continuous Drain Current, V
GS
@ 10V
4
Total Power Dissipation
Total Power Dissipation
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Total Power Dissipation
3
4
Single Pulse Avalanche Energy
5
Thermal Data
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
4
Maximum Thermal Resistance, Junction-ambient
3
3.7
58
℃/W
℃/W
1
201106013
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
