AP0904GYT-HF
10
1200
f=1.0MHz
I
D
= 13 A
V
DS
=20V
V
GS
, Gate to Source Voltage (V)
8
1000
800
6
C (pF)
C
iss
600
4
400
2
200
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
4
8
12
16
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
100us
0.2
0.1
0.1
I
D
(A)
1ms
1
0.05
10ms
100ms
1s
T
A
=25
o
C
Single Pulse
DC
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=85
℃/W
0.1
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
V
DS
=5V
50
V
G
Q
G
I
D
, Drain Current (A)
40
4.5V
Q
GS
Q
GD
30
20
T
j
=150 C
10
o
T
j
=25 C
o
T
j
=-40 C
o
Charge
5
6
Q
0
0
1
2
3
4
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
