AP0904GYT-HF
60
60
T
A
=25 C
50
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
40
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150
o
C
50
40
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
30
30
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
13
I
D
=8A
T
A
=25
℃
1.6
I
D
=13A
V
G
=10V
12
11
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.2
10
0.8
9
8
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
16
I
D
=250uA
1.6
12
Normalized V
GS(th)
(V)
I
S
(A)
1.2
T
j
=150
o
C
8
T
j
=25
o
C
0.8
4
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3