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AP05G120SW-HF 参数 Datasheet PDF下载

AP05G120SW-HF图片预览
型号: AP05G120SW-HF
PDF下载: 下载PDF文件 查看货源
内容描述: 与FRD N沟道绝缘栅双极晶体管 [N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 59 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP05G120SW-HF的Datasheet PDF文件第1页浏览型号AP05G120SW-HF的Datasheet PDF文件第3页  
AP05G120SW-HF
80
80
T
C
=25 C
I
C
, Collector Current (A)
60
o
20V
18V
15V
I
C
, Collector Current (A)
60
T
C
=150
o
C
20V
18V
15V
12V
40
12V
40
V
GE
=10V
20
V
GE
=10V
20
0
0
4
8
12
16
0
0
4
8
12
16
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
5
V
GE
=15V
50
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
I
C ,
Collector Current(A)
4
40
I
C
= 20 A
I
C
=15A
3
T
C
=25
30
T
C
=150
20
2
10
0
0
2
4
6
8
10
1
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Typical Saturation Voltage
Characteristics
2
1600
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
I
C
=1mA
1.6
1200
Normalized V
GE(th)
1.2
Capacitance (pF)
800
C
ies
0.8
400
0.4
0
-50
0
50
100
150
0
1
5
9
13
17
21
25
29
C
oes
C
res
33
37
Junction Temperature (
o
C )
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2