AP05G120SW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=2.3V@I
C
=5A
▼
CO-PAK, IGBT With FRD
▼
RoHS Compliant & Halogen-Free
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
TO-3P
G
E
Parameter
Rating
1200
+30
21
10.5
1
1200V
10.5A
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=100℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Collector-Emitter Voltage
Units
V
V
A
A
A
A
A
W
℃
℃
℃
42
6
40
125
-55 to 150
-55 to 150
300
Notes:
1.Pulse width limited by max. junction temperature.
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
1
2
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
=0V
V
CE
=30V
f=1.0MHz
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=5A
V
CE
=V
GE
, I
C
=250uA
I
C
=5A
V
CC
=600V
V
GE
=15V
V
CC
=960V,
I
c
=5A,
V
GE
=15V,
R
G
=22Ω,
Inductive Load
Min.
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.3
-
33
6.5
17.5
30
13
130
230
0.3
0.5
680
65
10
Max. Units
+500 nA
1
2.7
7
53
-
-
-
-
-
460
-
-
1088
-
-
mA
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
V
F
V
F
t
rr
Q
rr
Forward Voltage
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
F
=6A
I
F
=20A
I
F
=10A
di/dt = 100 A/µs
-
-
-
-
2.6
-
54
138
3
4
-
-
V
V
ns
nC
1
201210244
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
