AP04N80R-HF
12
1200
f=1.0MHz
I
D
=1A
V
GS
, Gate to Source Voltage (V)
10
1000
V
DS
=480V
8
800
6
C (pF)
C
iss
600
4
400
2
200
0
0
4
8
12
16
20
24
0
1
5
9
13
17
21
C
oss
C
rss
25
29
Q
G
, Total Gate Charge (nC)
V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
Operation in this
area limited by
R
DS(ON)
100us
0.1
0.1
0.05
P
DM
0.02
0.01
1
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1ms
T
C
=25
o
C
Single Pulse
0.1
1
10
100
10ms
100ms
DC
1000
10000
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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