AP04N80R-HF
4
2
T
C
=25 C
I
D
, Drain Current (A)
o
3
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
V
G
=6.0V
T
C
=150
o
C
2
10V
9.0V
8.0V
7.0V
V
G
=6.0V
1
2
1
1
0
0
0
8
16
24
32
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
3
I
D
=1mA
1.6
I
D
=1A
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
2
1.2
0.8
1
0.4
0
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
4
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=1mA
1.4
3
Normalized V
GS(th)
1.2
I
S
(A)
T
j
= 150
o
C
2
T
j
= 25 C
o
1.2
1
0.8
1
0.6
0
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
