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AP04N70BI-A 参数 Datasheet PDF下载

AP04N70BI-A图片预览
型号: AP04N70BI-A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 6 页 / 111 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP04N70BI-A
4.5
40
4
3.5
30
I
D
, Drain Current (A)
3
2.5
P
D
(W)
20
2
1.5
10
1
0.5
0
25
50
75
100
125
150
0
0
50
100
150
T
c
, Case Temperature (
o
C)
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
DUTY=0.5
10
Normalized Thermal Response (R
thjc
)
100us
I
D
(A)
0.2
0.1
1
0.1
1ms
10ms
100ms
T
c
=25
o
C
Single Pulse
0.01
1
10
100
1000
10000
0.05
P
DM
t
0.02
0.1
T
1s
DC
0.01
SINGLE PULSE
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4