AP04N70BI-A
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
3
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
650
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
2.5
-
-
-
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
Max. Units
-
-
2.4
4
-
10
500
+100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
V
GS
=10V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=600V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=4A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=4A
R
G
=10Ω,V
GS
=10V
R
D
=75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=480V
,
V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=4A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
o
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
1
Min.
-
-
-
Typ.
-
-
-
Max. Units
4
15
1.5
A
A
V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
T
j
=25℃, I
S
=4A, V
GS
=0V
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
