AP02N60T-H-HF
1.5
0.9
T
A
=25 C
I
D
, Drain Current (A)
o
10V
6.0V
5.5V
I
D
, Drain Current (A)
0.6
T
A
=150 C
o
10V
6.0V
5.5V
1
5.0V
0.5
5.0V
V
G
= 4.5 V
0.3
V
G
= 4.5 V
0
0
5
10
15
20
0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=0.3A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1
1
0.9
0.8
0
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
10
T
j
= 150 C
o
T
j
= 25
o
C
V
GS(th)
(V)
I
S
(A)
3
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
