AP02N60T-H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristics
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
700V
9Ω
0.3A
S
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
D
G
TO-92
Top View
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
L
=25℃
I
DM
P
D
@T
L
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
700
+30
0.3
1.2
2
3
Units
V
V
A
A
W
mJ
℃
℃
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
25
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Rthj-l
Parameter
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-lead
Value
150
60
Units
℃/W
℃/W
1
200911041
Data & specifications subject to change without notice