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AP02N60I_08 参数 Datasheet PDF下载

AP02N60I_08图片预览
型号: AP02N60I_08
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 114 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP02N60I
f=1.0MHz
16
200
14
160
V
GS
, Gate to Source Voltage (V)
12
I
D
=2A
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
Ciss
10
120
8
80
6
4
40
2
Coss
Crss
0
0
0
2
4
6
8
10
12
14
16
18
20
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
I
S
(A)
3
T
j
= 150
o
C
T
j
= 25
o
C
V
GS(th)
(V)
1.4
1.6
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature (
o
C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5