AP02N60I
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
0.2
-
-
-
14
2
8.5
9.5
12
21
9
155
27
14
Max. Units
-
-
8
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=1A
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, I
D
=1A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=2A
V
DS
=480V
V
GS
=10V
V
DS
=300V
I
D
=2A
R
G
=10Ω,V
GS
=10V
R
D
=150Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25
o
C , V
DD
=50V , L=40mH , R
G
=25Ω , I
AS
=2A.
3.Pulse test
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
T
j
=25℃, I
S
=2A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
2
3.6
1.5
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
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HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
