AP01N40G-HF
12
160
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=1A
V
DS
=320V
10
120
8
6
C (pF)
80
C
iss
4
40
2
0
0
1
2
3
4
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
100us
1ms
10ms
Normalized Thermal Response (R
thja
)
Operation in this
area limited by
R
DS(ON)
Duty factor=0.5
0.2
0.1
0.1
0.1
I
D
(A)
0.05
100ms
0.01
0.02
0.01
1s
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
A
R
thja
=100
o
C/W
T
A
=25 C
Single Pulse
0.001
0.1
1
10
100
o
DC
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4