AP01N40G-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
100% Avalanche Test
▼
Fast Switching Performance
▼
Simple Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
D
400V
16Ω
0.2A
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
3
3
Rating
400
+20
0.2
0.14
0.8
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
100
Units
℃/W
1
201005191
Data & specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
