AP01L60T
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
0.8
-
-
-
4.0
1.0
1.1
6.6
5.0
11.7
9.2
170
30.7
5.1
Max. Units
-
-
12
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=0.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=0.5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=1A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=300Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
I
S
=160mA, V
GS
=0V
Min.
-
-
Typ.
-
-
Max. Units
160
1.2
mA
V
Forward On Voltage
3
Notes:
1.Pulse width limited by safe operating area.
3.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
