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VDS8616A8A 参数 Datasheet PDF下载

VDS8616A8A图片预览
型号: VDS8616A8A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM ( 4M ×16位×4银行) [Synchronous DRAM(4M X 16 Bit X 4 Banks)]
分类和应用: 动态存储器
文件页数/大小: 8 页 / 496 K
品牌: ADATA [ ADATA Technology Co., Ltd. ]
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V-Data  
VDS8616A8A  
4M x 16 Bit x 4 Banks  
Synchronous DRAM  
General Description  
Features  
JEDEC standard LVTTL 3.3V power supply  
MRS Cycle with address key programs  
The VDS8616A8A are four-bank Synchronous  
DRAMs organized as 4,194,304 words x 16 bits x 4  
banks,  
-CAS Latency (2 & 3)  
Synchronous design allows precise cycle control  
with the use of system clock I/O transactions are  
possible on every clock cycle.  
Range of operating frequencies, programmable  
burst length and programmable latencies allow the  
same device to be useful for a variety of high  
bandwidth high performance memory system  
applications  
-Burst Length (1,2,4,8,& full page)  
-Burst Type (sequential & Interleave)  
4 banks operation  
All inputs are sampled at the positive edge of  
the system clock  
Burst Read single write operation  
Auto & Self refresh  
DQM for masking  
8192 Refresh Cycles  
Package:54-pins 400 mil TSOP-Type II  
Ordering Information.  
Part No.  
Frequency  
133Mhz-333  
133Mhz-222  
Interface  
Package  
VDS8616A8A-75  
VDS8616A8A-75A  
Pin Assignment  
LVTTL  
LVTTL  
400mil 54pin TSOPII  
400mil 54pin TSOPII  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
V
DD  
1
2
Vss  
DQ0  
DQ7  
V
DDQ  
3
Vss  
NC  
Q
4
NC  
DQ1  
5
DQ6  
V
SSQ  
6
VDDQ  
NC  
7
NC  
DQ2  
8
DQ5  
V
DDQ  
9
VSSQ  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
NC  
DQ3  
DQ4  
V
SSQ  
VDDQ  
NC  
NC  
V
DD  
VSS  
NC  
NC/RFU  
DQM  
CK  
/WE  
/CAS  
/RAS  
/CS  
BA0  
BA1  
A10/AP  
A0  
CKE  
NC  
A11  
A9  
A8  
A7  
A1  
A6  
A2  
A5  
A3  
A4  
V
DD  
VSS  
54-pin plastic TSOP II 400 mil  
Rev 1.0 December, 2001  
1