V-Data
VDS8616A8A
4M x 16 Bit x 4 Banks
Synchronous DRAM
General Description
Features
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
The VDS8616A8A are four-bank Synchronous
DRAMs organized as 4,194,304 words x 16 bits x 4
banks,
-CAS Latency (2 & 3)
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of
the system clock
•Burst Read single write operation
•Auto & Self refresh
•DQM for masking
•8192 Refresh Cycles
•Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No.
Frequency
133Mhz-333
133Mhz-222
Interface
Package
VDS8616A8A-75
VDS8616A8A-75A
Pin Assignment
LVTTL
LVTTL
400mil 54pin TSOPII
400mil 54pin TSOPII
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
DD
1
2
Vss
DQ0
DQ7
V
DDQ
3
Vss
NC
Q
4
NC
DQ1
5
DQ6
V
SSQ
6
VDDQ
NC
7
NC
DQ2
8
DQ5
V
DDQ
9
VSSQ
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
NC
DQ3
DQ4
V
SSQ
VDDQ
NC
NC
V
DD
VSS
NC
NC/RFU
DQM
CK
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
CKE
NC
A11
A9
A8
A7
A1
A6
A2
A5
A3
A4
V
DD
VSS
54-pin plastic TSOP II 400 mil
Rev 1.0 December, 2001
1