AP502
The Communications Edge
TM
Product Information
UMTS-band 4W HBT Amplifier Module
Performance Graphs – Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
730Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
2.2nH
5
4
3
2
1
DNP
DNP
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=275mA
Wideband S-Parameters
+25 °C, Icq=275mA
Gain / Output Power vs. Input Power
38
36
P o u t (d B m )
34
32
30
28
Pout
Gain
-2
0
2
4
6
8
10
2140 MHz, +25 °C, Icq=275mA
31
30
S 2 1 (d B )
29
28
27
S21
26
2110
2130
S11
2150
S22
5
M a g n itu d e (d B )
40
30
29
28
27
26
25
G a in (d B )
P A E (% )
-5
-10
-15
-20
2170
S 1 1 , S 2 2 (d B )
0
20
0
-20
-40
0
S21
S11
S22
500
1000
1500
2000
2500
3000
Frequency (MHz)
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
Frequency (MHz)
Input Power (dBm)
PAE / Icc vs. Output Power
60
50
40
30
20
800
700
O IP 3 (d B m )
Ic c (m A )
600
500
400
300
22
24
26
28
30
32
34
Output Power (dBm)
2140 MHz, +25 °C, Icq=275mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq=275mA
-40
-20
-30
IM D (d B c )
-40
-50
-60
A C L R (d B c )
-50
IMD3L
IMD3U
IMD5
OIP3
Icc
PAE
25
20
15
10
5
0
-60
±5 MHz
±10 MHz
-70
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
20
22
24
26
28
30
32
Output Power per tone (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 5 February 2006
WJCI [ WJ COMMUNICATION. INC. ]
