AP502
The Communications Edge
TM
Product Information
UMTS-band 4W HBT Amplifier Module
Performance Graphs – Class AB Configuration (AP502-PCB)
The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0
Ω
in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
0Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
0Ω
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Narrowband S-Parameters
+25 °C, Icq=850mA
Wideband S-Parameters
+25 °C, Icq=850mA
Gain / Output Power vs. Input Power
38
36
P o u t (d B m )
34
32
30
28
Pout
Gain
-6
-4
-2
0
2
4
6
2140 MHz, +25 °C, Icq = 850mA
33
32
S 2 1 (d B )
31
30
29
5
40
M a g n itu d e (d B )
20
0
-20
-40
0
32.5
32
31.5
31
30.5
30
G a in (d B )
0
-5
-10
-15
S 1 1 , S 2 2 (d B )
S21
S11
S22
S21
28
2110
2130
S11
2150
S22
-20
2170
500
1000
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
Input Power (dBm)
PAE / Icc vs. Output Power
60
50
40
IMD3L
IMD3U
IMD5
OIP3
30
20
1000
950
O IP 3 (d B m )
Ic c (m A )
900
850
800
750
22
24
26
28
30
32
34
Output Power (dBm)
Specifications and information are subject to change without notice
2140 MHz, +25 °C, Icq = 850mA
ACLR vs. Channel Power
3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, ±5 MHz offset
2140 MHz, Icq=850mA
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq = 850mA
-40
-45
-50
-55
-60
18
-40
-50
IM D (d B c )
-60
-70
-80
-40 C
+25 C
+85 C
Icc
PAE
25
20
15
10
5
0
P A E (% )
A C L R (d B c )
20
22
24
26
28
20
22
24
26
28
30
32
Output Channel Power (dBm)
Output Power per tone (dBm)
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 5 February 2006
WJCI [ WJ COMMUNICATION. INC. ]
